Dr. Yan Li received her B.S. degree in Modern Physics from the University of Science and Technology of China.  She received an M.S. and Ph.D. in Materials Science and Engineering from Lehigh University in Pennsylvania, USA.

In 1998, she joined SanDisk Corporation, Sunnyvale, CA, working on Flash Memory Technology. She led teams that designed many generations of NAND flash memory, including the industry’s first 3 bits per cell NAND memory, and brought them into mass production.  She has won the Lewis Winner Award for best paper at International Solid State Circuit Conferences (ISSCC) in 2008 and 2012.  She is currently a Vice President for memory design, leading the advanced 3D NAND design, as well as other non-volatile memories and new innovation initiatives. She has created many innovative ideas to improve NAND products, and holds more than 200 patents.  She initiated the Innovation Bazaar in 2016 and is the organizer for WDC innovation Bazaar 2021.